연구

  • 연구실 소개

연구실 소개

광전자 재료 연구실 (Advanced Electronic & Energy Materials Lab.)

연구실 소개
  • 그래핀 및 차세대 IC 전자 소자 연구
  • 나노 구조 무기재료 광학적 전자적 특성 개선과 전자 소자 활용 연구
  • 에너지 변환 소재 및 소자 연구
광전자 재료 연구실 이미지
연구분야

The researches at AEEM are focused on finding/developing novel electrical, chemical, optoelectric functionality of nano-scale materials, which enhance the efficiency of energy conversion devices such as solar cells and photocatalysis and are implemented for next-generation IC devices and optical devices. The specific topics are

  • 1. oxide doping technique for solar cells,
  • 2. local surface plasmon effect,
  • 3. heterojunction energy conversion device,
  • 4. graphene-based semiconductor and its application in electronic devices.

Especially, we closely collaborate with industry companies for development of solar cells and advanced semiconductor and devices.


광전자 재료 연구실에서는 나노재료의 새로운 전기적, 화학적, 광학적 특성을 개발하고 이를 이용하여 에너지변환소자 (태양전지, 광촉매 등)의 효율을 향상시키고 차세대 나노전자소자(집적회로소자)와 광학소자(LED, 디스플레이)의 개발에 대한 연구를 수행 중입니다. 구체적으로 진행 중인 주요 연구 주제는

  • 1. 태양광 수확을 위한 산화물 반도체 도핑기술 개발,
  • 2. 산화물 나노구조를 이용한 국부적 플라즈몬 재료 개발,
  • 3. 이종접합형 촉매-전기에너지 변환 소자 개발,
  • 4. 그래핀 기반 반도체 물질개발 및 전자 소자 개발

등이 있으며 태양전지 및 차세대 반도체 재료-소자 개발을 위해 긴밀한 산학협력연구를 진행 중입니다.

광전자 재료 연구실 이미지
연구성과 (2009~)

A. 연구 프로젝트

  • (1) 2013-2015 착색성 수소 디텍션 필름 개발 (현대차그룹 산학협동연구), 현대 NGV
  • (2) 2013-2014 CuInGaSe (CIGS) 태양전지의 효율향상을 위한 Buffer Layer의 전자구조 및 밴드Offset 분석
    (LG이노텍 산학협동연구), LG 이노텍
  • (3) 2012-2015 태양광 에너지 수확을 위한 나노구조 산화물 반도체의 도핑 기술 개발 (일반연구자 지원 사업 신진연구),
    한국연구재단
  • (4) 2011-2013 태양광 이용을 위한 가시광 흡수 산화물 반도체에 관한 연구 (아주대학교 교내정착 연구비 지원사업), 아주대학교

B. 연구 성과


B-1. 국외 학술 논문지

  • 1. M. Han , H. Kim , H. Seo, B. Ma , and J. W. Park, "Photovoltaic Efficiency Enhancement by the Generation of an Embedded Silica-Like Passivation Layer along the P3HT/PCBM Interface Using an Asymmetric Block-Copolymer Additive " Adv. Mat. 24 (47) 6311-6317 (2012). (Published on 09/13/2012)
  • 2. J. Kim, S. Bang, S. Lee, S. Shin, J. Park, H. Seo* and H. Jeon*, "A study on H2 plasma treatment effect on a-IGZO thin film transistor", J. Mat. Res. 27 (17) 2318-2325 (2012). (*Co-corresponding author, Published on 06/06/2012)
  • 3. S. Bang, S. Lee, Y. Ko, J. Park, S. Shin, H. Seo* and H. Jeon*, Photocurrent detection of chemically tuned hierarchical ZnO nanostructures grown on seed layers formed by atomic layer deposition", Nanoscale Res. Lett. 7, 290 (2012) doi:10.1186/1556-276X-7-290 (*Co-corresponding author, Published on 06/06/2012)
  • 4. S. Bang, S. Lee, T. Park, Y. Ko, S. Shin, S.-Y. Yim, H. Seo* and H. Jeon*, "Dual optical functionality of local surface plasmon resonance for RuO2 nanoparticle-ZnO nanorod hybrids grown by atomic layer deposition", J. Mater. Chem. 22, 14141-14148 (2012) (*Co-corresponding author, Published on 06/27/2012)
  • 5. H. Seo*, S. Kwon*, K. J. Jeon, and J. Y. Park, "Reversible Bistability of Nanoscale Conductance on Single Layer Graphene/Oxide Junction", Appl. Phys. Lett. 100, 123101 (2012) (*Equal Contribution) (Published on 03/19/2012)

  • 6. H. Seo*, Y. J. Cho, J. Kim, and D. K. Choi*, "Photochemical Doping of Metal Oxide Semiconductors via Electronically Mediated Surface-OH Reaction", In preparation. (*Co-corresponding author)
  • 7. Y. K. Lee, C. H. Jung, J. Park, H. Seo, G. A. Somorjai, and J. Y. Park, "Surface Plasmon-Driven Hot Electron Flow Probed with Metal-Semiconductor Nanodiodes", Nano Lett. 11 (10) 4251-4255 (2011). (Published on 11/09/2011)
  • 8. L. R. Baker, A. Hervier, H. Seo, G. Kennedy, K. Komvopoulosand, and G. A. Somorjai, "Highly n-Type Titanium Oxide as an Electronically Active Support for Platinum in the Catalytic Oxidation of Carbon Monoxide", J. Phys. Chem. C. 115, 16006-16011 (2011). (Published on 07/11/2011)
  • 9. J. Y. Park, L. Belau, H. Seo, and G. A. Somorjai, "Improved Oxidation Resistance of RuSi Capping Layer for Extreme Ultraviolet (EUV) Lithography Reflector", J. Vac. Sci. B 29, 014602-1~5 (2011). (Published on 06/06/2011)
  • 10. H. Seo*, L. R. Baker*, A. Hervier, J. Kim, J. L. Whitten, and G. A. Somorjai, "Generation of Highly n-Type Titanium Oxide Using Plasma Fluorine Insertion", Nano Lett. 11, 751-756 (2011). (*Equal Contribution, Published on 12/22/2010)

  • 11. N. G. Cho, H. Seo*, H. D. Kim, H. G. Kim, J. Kim, and I. D. Kim*, "Characterization on Band-Edge Electronic Structure of High-k Bi1.5Zn1.0Nb1.5O7 and MgO- Bi1.5Zn1.0Nb1.5O7 Composite Gate Dielectrics for ZnO-Thin Film Transistors", Electrochem. Solid-State Lett. 14 (1), G4-G7 (2010). (*Co-corresponding author, Published on 11/11/2010)
  • 12. D. H. Kim, H. Seo*, K. B. Chung, N. G. Cho, H. G. Kim, and I. D. Kim*, "Low voltage operating InGaZnO4 based flexible thin film transistors using room temperature grown Mg2Hf5O12 gate insulator", J. Electrochem. Soc. 157 (10), H964~968 (2010). (* Co-corresponding author, Published on 08/25/10)
  • 13. H. Seo, Y.-J. Cho, J. Kim, S. M.bobade, K.-Y. Park, J. Lee, and D.-K. Choi, "Permanent Optical Doping of Amorphous Metal Oxide Semiconductors by Deep Ultraviolet Irradiation at Room Temperature", Appl. Phys. Lett. 96, 222101-1~3 (2010). (published on 05/31/10)
  • 14. H. Seo, C.-J Park, Y.-J. Cho, Y.-B. Kim, and D.-K. Choi, "Correlation of Band Edge Native Defect State Evolution to Bulk Mobility Changes in ZnO Thin Films", Appl. Phys. Lett. 96, 232101-1~3 (2010). (published on 06/07/10)
  • 15. H. Seo, J. Y. Park, T. Liang, and G. A. Somorjai, "Electrochemically Enhanced Wet Cleaning of Ru Capping Thin Film for EUV Lithography Reflector", J. Electrochem. Soc. 157 (11), H414~419 (2010). (published on 02/18/2010)

  • 16. H. Seo, Y. Kim, G. Lucovsky, I. D. Kim, K. B. Chung, H. Kobayashi, and D. K. Choi, "Enhanced Leakage Current Properties of Nickel-doped Ba0.6Sr0.4TiO3 Thin Films driven by Band Edge State Changes", J. Appl. Phys. 107,
    024109-1~7 (2010). (published on 01/28/2010)
  • 17. K. B. Chung, J. P. Long, H. Seo, G. Lucovsky, and D. Nordlund, "Thermal evolution and electrical correlation of defect states in Hf-based high-k dielectrics on n-type Ge (100): Local atomic bonding", J. Appl. Phys. 106, 074102-1~4 (2009). (Published on 10/05/2009)
  • 18. H. Seo, F. Bellenger, K. B. Chung, M. Houssa, M. Meuris, M. Heyns, and G. Lucovsky, "Extrinsic defects at interfaces of GeOx/HfO2 and Al2O3 gate stacks on Ge (100) substrates", J. Appl. Phys. 106, 044909 (2009).
    (Published on 8/26/2009)
  • 19. H. Seo, K. B. Chung J. P. Long, and G. Lucovsky, "Preparation of Native Oxide and Carbon Minimized Ge surface by NH4OH based Cleaning for Deposition of High-k Dielectrics", J. Electrochem. Soc. 156, H813~817 (2009).
    (Published on 09/16/2009)
  • 20. L. B. Jeong Y. Park, T. Liang, H. Seo, and G. A. Somorjai, "Chemical Effect of Dry and Wet Cleaning of the Ru Protective Layer of the Extreme Ultraviolet (EUV) Lithography Reflector", J. Vac. Sci. Technol. B 27 (4), 1919~1925 (2009).
    (published on 07/09/09)

  • 21. G. Lucovsky, H. Seo, J. P. Long, K. B. Chung, R. Vasic, M. Ulrich, "Defect states in HfO2 on deposited on Ge(111) and Ge(100) substrates", Appl. Surf. Sci. 255, 6443~6450 (2009). (published on 10/08/08)
  • 22. G. Lucovsky, J. P. Long, K.-B. Chung, H. Seo, B. Watts, R. Vasic, and M. D. Ulrich, "Predeposition plasma nitridation process applied to Ge substrates to passivate interfaces between crystalline-Ge substrates and Hf-based high-K dielectrics", J. Vac. Sci. Technol. B 27 (1), 294~299 (2009). (published on 02/09/09)
  • 23. G. Lucovsky, S. Lee, J.P. Long, H. Seo, and J. L?ning, " Interfacial transition regions at germanium/Hf oxide based dielectric interfaces: Qualitative differences between non-crystalline Hf Si oxynitride and nanocrystalline HfO2 gate stacks", Microelectron. Eng. 86, 224~234 (2009). (published on 06/16/08)

B-2. 국내 학술 논문지


B-3. 국내외 특허

  • 1. “저항 변화 메모리 소자 및 그 제조방법,” 한국 특허 출원 중 (2013).
  • 2. “전도성 산화물 나노입자를 이용한 표면 플라즈몬 공명 광학 소재, 이의 제조방법 및 이를 포함하는 광학 소자” 한국 특허 출원 중 (2013).
  • 3. "Generation of Highly N-type, Defect Passivated Transition Metal Oxides Using Plasma Fluorine Insertion" U.S. Patent Application Ser. No: 61/423,959, December 16, 2010 & International Patent Application Ser. No: PCT/2011/065587 (2011).
  • 4. "Oxide doping for catalysis" Disclosure International Patent Ser. No: 127252 (2011).
  • 5. "Catalytic Field Effect Transistor" Disclosure International Patent Ser. No: 127206 (2011).

B-4. 국외 학술회의 발표

  • 1. H. Seo, J. Kim, J. Kim, and G. Lucovsky, "Evolution of Band Edge Energy States with a Local Structure Changes in Nanocrystalline TiO2 films", International Conference on Electronic Materials and Nanotechnology for Green Environment, Jeju, Korea, Sep. 19 2012 (Oral)
  • 2. H. Seo, J. H. Park, J. Kim, J. S. Kim, D. K. Choi, "Photochemically Highly N-Doped InGaZnO and ZnO Semiconductors via Electronically Mediated Surface-OH Reaction", International Conference on Electronic Materials and Nanotechnology for Green Environment, Jeju, Korea, Sep. 19 2012 (Oral).
  • 3. S. Bang, S. Lee, T. Park, Y. Ko, S. Shin, J. Kim, H. Seo, and H. Jeon, "Dual Optical Functionality of Local Surface Plasmon Resonance for RuO2 Nanoparticle/ZnO Nanorod Hybrids", International Union of Materials Research Society - International Conference in Asia 2012, BEXCO, Busan, Korea , August 26-31, 2012. (Oral)
  • 4. H Seo, L. R. Baker, A. Hervier, J. Kim, J. L. Whitten, and G. A. Somorjai, "Generation of Highly n-Type Titanium Oxide Using Plasma Fluorine Insertion", 2011 MRS Spring Meeting, San Francisco, CA, USA, April 25-29, 2011. (Oral)
  • 5. A. Hervier, H Seo, L. R. Baker, and G. A. Somorjai, "Tuning the surface chemistry of a catalyst by modifying its electronic structure", 241st ACS National Meeting & Exposition, Anaheim, California, USA, March 27-31, 2011. (Oral)

  • 6. L. R. Baker, H Seo, A. Hervier, and G. A. Somorjai , "Electronic mediation of surface chemistry at the metal-oxide interface", 241st ACS National Meeting & Exposition, Anaheim, California, USA, March 27-31, 2011.
  • 7. H. Seo, J. Y. Park, T. Laing, G. Somorjai, "The Optimized Wet Cleaning for Extreme Ultraviolet (EUV) Masks: Cleaning Efficiency for Residual Photoresist and Ru Capping Layer Surface", American Vacuum Society 56th International symposium, San Jose, CA, November 8-13, 2009.
  • 8. G. Lucovsky, H. Seo, K. B. Chung, and J. Kim "Spectroscopic detection of (i) intrinsic band edge defects, and (ii) transition metal (TM) and rare earth lanthanide (REL) atom occupied states in elemental and complex oxides: a novel pathway to (i) device reliability and (ii) increased functionality in ULSI CMOS", 10th International Conference on Ultimate Integration of Silicon, Aachen, Germany, March 18-20, 2009. (Oral)
  • 9. G. Lucovsky, J.P. Long, H. Seo, K-B. Chung, " Process Induced Defects at Ge/High-k interfaces and in HfO2 and HfSiON dielectrics in Gate Stack Hetero-structures", 36th Conference on the Physics and Chemistry of Semiconductor Interfaces, Santa Barbara, California, Jan. 12, 2009. (Oral)

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